25L6405; MX25L6405; MX25L6405D

DataSheet 25L6405; MX25L6405; MX25L6405D​

64M-BIT [x 1] CMOS SERIAL e-Lite-Flash-TM MEMORY

GENERAL

• Serial Peripheral Interface (SPI) compatible -- Mode 0 and Mode 3
• 67,108,864 x 1 bit structure
• 128 Equal Sectors with 64K byte each
• Any sector can be erased
• Single Power Supply Operation
• 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is from 1.5V to 2.5V

PERFORMANCE

• High Performance
• Fast access time: 50MHz serial clock (30pF + 1TTL Load)
• Fast program time: 3ms/page (typical, 256-byte per page)
• Fast erase time: 1s/sector (typical, 64K-byte per sector) and 128s/chip (typical)
• Acceleration mode:
• Program time: 2.4ms/page (typical)
• Erase time: 0.8s/sector (typical) and 102s/chip (typical)
• Low Power Consumption
• Low active read current: 30mA (max.) at 50MHz
• Low active programming current: 30mA (max.)
• Low active erase current: 38mA (max.)
• Low standby current: 50uA (max.)
• Deep power-down mode 1uA (typical)
• Minimum 10K erase/program cycle for array
• Minimum 100K erase/program cycle for additional 4Kb