- Производитель
- Toshiba
DataSheet K8A50D; TK8A50D
Silicon N-Channel MOSFETSwitching Regulator Applications
- Low drain-source ON-resistance: RDS (ON) = 0.7Ω (typ.)
- High forward transfer admittance: |Yfs| = 4.0 S (typ.)
- Low leakage current: IDSS = 10 µA (max) (VDS = 500 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

